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Published in 2025 at "Journal of Physics D: Applied Physics"
DOI: 10.1088/1361-6463/adb9fa
Abstract: In semiconductor technology, bandgap engineering is a cornerstone challenge that continues to evolve. By employing the full and low-energy tight-binding model, we focused on the effects of twist-angle on the bandgaps of twisted bilayer γ-graphyne…
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Keywords:
twist angle;
bandgaps twisted;
bilayer graphyne;
twisted bilayer ... See more keywords