An electrically switchable anti-ferroelectric bilayer In2Se3 based opto-spintronic device.
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DOI: 10.1039/d1nr00369k
Abstract: Based on non-equilibrium Green's function combined with density functional theory (NEGF-DFT), we theoretically investigate the spin-related photogalvanic effect (PGE) in two anti-ferroelectric bilayer In2Se3 structures by atomic first-principles calculations. It is found that, due to… read more here.
Keywords: anti ferroelectric; ferroelectric bilayer; spin; bilayer ... See more keywords