Strain-Induced Indirect-to-Direct Bandgap Transition, Photoluminescence Enhancement, and Linewidth Reduction in Bilayer MoTe2.
Sign Up to like & getrecommendations! Published in 2022 at "ACS nano"
DOI: 10.1021/acsnano.2c01665
Abstract: Two-dimensional (2D) layered materials provide an ideal platform for engineering electronic and optical properties through strain control because of their extremely high mechanical elasticity and sensitive dependence of material properties on mechanical strain. In this… read more here.
Keywords: photoluminescence; bilayer mote2; strain; indirect direct ... See more keywords
High performance bilayer MoTe2 transistors with co-sputtered ternary HfAlO2 high-k dielectric
Sign Up to like & getrecommendations! Published in 2024 at "Applied Physics Letters"
DOI: 10.1063/5.0183755
Abstract: We demonstrated that ternary HfAlO2 amorphous film prepared with common co-sputtering technology can be a suitable gate dielectric for bilayer MoTe2 transistors. The film quality can be improved by optimizing the sputtering process and post-annealing… read more here.
Keywords: bilayer mote2; ternary hfalo2; mote2 transistors; high performance ... See more keywords