Enhanced gate stack stability in GaN transistors with gate dielectric of bilayer SiNx by low pressure chemical vapor deposition
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DOI: 10.1063/1.5042809
Abstract: We report enhanced gate stack stability in GaN metal insulator semiconductor high electron mobility transistors (MISHEMTs) by using a bilayer SiNx as the gate dielectric. To obtain the bilayer gate dielectric scheme, a thin Si-rich… read more here.
Keywords: gate dielectric; gate stack; bilayer sinx; bilayer ... See more keywords