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Published in 2025 at "Journal of Materials Chemistry C"
DOI: 10.1039/d5tc03215f
Abstract: TThe high hole mobility and layer-dependent properties of two-dimensional (2D) tin monoxide (SnO) makes it a promising candidate for use as a channel material in field effect transistors. However, the...
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Keywords:
tin monoxide;
bilayer tin;
monoxide edge;
monolayer bilayer ... See more keywords