Symmetrically Ion‐Gated In‐Plane Metal‐Oxide Transistors for Highly Sensitive and Low‐Voltage Driven Bioelectronics
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DOI: 10.1002/advs.202103275
Abstract: To provide a unique opportunity for on‐chip scaled bioelectronics, a symmetrically gated metal‐oxide electric double layer transistor (EDLT) with ion‐gel (IG) gate dielectric and simple in‐plane Corbino electrode architecture is proposed. Using amorphous indium‐gallium‐zinc oxide… read more here.
Keywords: metal oxide; low voltage; voltage driven; plane ... See more keywords