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Published in 2024 at "Nano-Micro Letters"
DOI: 10.1007/s40820-024-01559-2
Abstract: Wafer-scale integration of Ag2S-based memristive crossbar arrays was demonstrated using complementary metal–oxide–semiconductor (CMOS) compatible processes below 160 °C. A record-low threshold voltage for filament formation and an ultra-low switching-energy reaching that of biological synapses in…
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Keywords:
energy;
biological synapses;
crossbar arrays;
memristive crossbar ... See more keywords