Optimization of oxygen vacancy concentration in HfO2/HfOx bilayer-structured ultrathin memristors by atomic layer deposition and their biological synaptic behavior
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DOI: 10.1039/d0tc02494e
Abstract: HfOx-based resistive random-access memory devices have shown great potential in next-generation non-volatile memory devices, but they are not optimized as synaptic devices for neuromorphic systems. In this paper, the fabrication and biological synaptic behavior of… read more here.
Keywords: hfo2 hfox; oxygen vacancy; hfox; biological synaptic ... See more keywords