Interconversion Between Bipolar and Complementary Behavior in Nanoscale Resistive Switching Devices
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DOI: 10.1109/ted.2018.2882652
Abstract: In the study of resistive random access memory using GeTeOx film as the switching layer, the device performed excellent property of bipolar resistive switching (BRS), which could be gradually transformed to the complementary resistive switching… read more here.
Keywords: devices interconversion; resistive switching; interconversion bipolar; bipolar complementary ... See more keywords