Transient Overshoot Voltages During VF-TLP Pulses for Bipolar Devices in the Presence of Lowly Doped Regions
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Transactions on Device and Materials Reliability"
DOI: 10.1109/tdmr.2020.3037539
Abstract: The transient overshoot behavior of bipolar devices is investigated by means of very fast transmission line pulses (VF-TLP). All devices under investigation, a forward biased diode, an open base transistor and a SCR comprise a… read more here.
Keywords: lowly doped; bipolar devices; overshoot; voltages tlp ... See more keywords
Evaluation of Dynamic Avalanche Performance in 1.2-kV MOS-Bipolar Devices
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2020.3007594
Abstract: It is well-known that the dynamic avalanche (DA) phenomenon poses fundamental limits on the power density, turn-off power loss, dV/dt controllability, and long-term reliability of MOS-bipolar devices. Therefore, overcoming this phenomenon is essential to improve… read more here.
Keywords: bipolar devices; performance; density; mos bipolar ... See more keywords