Schottky bipolar I-MOS: An I-MOS with Schottky electrodes and an open-base BJT configuration for reduced operating voltage
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DOI: 10.1016/j.spmi.2017.03.004
Abstract: Abstract In this paper, we have proposed a novel impact ionization MOS (I-MOS) structure, called the Schottky bipolar I-MOS, with Schottky source and drain electrodes and utilizing the open-base bipolar junction transistor (BJT) configuration for… read more here.
Keywords: voltage; bipolar mos; schottky bipolar; operating voltage ... See more keywords