The bipolar resistive switching and negative differential resistance of NiO films induced by the interface states
Sign Up to like & getrecommendations! Published in 2019 at "Journal of Materials Science: Materials in Electronics"
DOI: 10.1007/s10854-019-02046-w
Abstract: The Au/NiO/Pt structure was fabricated by magnetron sputtering on the TiOx/SiO2/Si substrates to investigate the bipolar resistive switching and negative differential resistance in details. The XRD results shows the NiO films have the (111) preferential… read more here.
Keywords: voltage; resistive switching; differential resistance; negative differential ... See more keywords
Characteristics of the bipolar resistive switching behavior in memory device with Au/ZnO/ITO structure
Sign Up to like & getrecommendations! Published in 2018 at "Chinese Journal of Physics"
DOI: 10.1016/j.cjph.2018.10.019
Abstract: Abstract In this work, reproducible and stable bipolar resistive switching behavior without the requirement of forming process is observed in the memory device with Au/ZnO/ITO structure. It shows a high Ron/Roff ratio, where Ron and… read more here.
Keywords: memory; switching behavior; zno ito; resistive switching ... See more keywords
High endurance of bipolar resistive switching in a Pt/LaNiO3/Nb:SrZrO3/Cu stack: The role of Cu modulating layer
Sign Up to like & getrecommendations! Published in 2020 at "Chemical Physics Letters"
DOI: 10.1016/j.cplett.2019.137040
Abstract: Abstract A bipolar resistive switching characterizes in Pt/LaNiO3/0.2%Nb:SrZrO3/Cu (Pt/LNO/Nb:SZO/Cu) structure was investigated, as the Cu and LNO layers were employed as the capping and buffering layers, respectively. Interestingly, the bistable bipolar switching characteristic was achieved… read more here.
Keywords: high endurance; lanio3 srzro3; endurance bipolar; resistive switching ... See more keywords
Annealing effect on the bipolar resistive switching memory of NiZn ferrite films
Sign Up to like & getrecommendations! Published in 2019 at "Journal of Alloys and Compounds"
DOI: 10.1016/j.jallcom.2018.11.345
Abstract: Abstract A detailed understanding of the resistive switching behaviors and relevant physical mechanism is key to controlling nonvolatile memory devices. Pt/Ni0.5Zn0.5Fe2O4/Pt was synthesized by radio frequency magnetron sputtering method at room temperature. The typical bipolar… read more here.
Keywords: switching memory; bipolar resistive; memory; resistive switching ... See more keywords
Role of highly doped Si substrate in bipolar resistive switching of silicon nitride MIS-capacitors
Sign Up to like & getrecommendations! Published in 2018 at "Microelectronic Engineering"
DOI: 10.1016/j.mee.2017.11.002
Abstract: Abstract Bipolar resistive switching of the metal-insulator-semiconductor (MIS) capacitor-like structures with the inert Au top electrode and Si3N4 dielectric nanolayer (6 nm thick) has been investigated. The effect of highly doped n+-Si substrate is revealed related… read more here.
Keywords: highly doped; role highly; substrate bipolar; resistive switching ... See more keywords
Bipolar resistive switching characteristics of a sol-gel InZnO oxide semiconductor
Sign Up to like & getrecommendations! Published in 2019 at "Physica B: Condensed Matter"
DOI: 10.1016/j.physb.2019.02.048
Abstract: Abstract This paper investigates the bipolar resistive switching characteristics of a sol-gel Ga-free InZnO (IZO) oxide semiconductor. Resistive random-access memories (RRAMs) using IZO films as the resistive switching layers are fabricated. The effects of the… read more here.
Keywords: sol gel; bipolar resistive; switching characteristics; resistive switching ... See more keywords
Analysis of the conduction mechanisms responsible for multilevel bipolar resistive switching of SiO2/Si multilayer structures
Sign Up to like & getrecommendations! Published in 2020 at "Superlattices and Microstructures"
DOI: 10.1016/j.spmi.2019.106347
Abstract: Abstract We report on the bipolar resistive switching behavior of a SiO2/Si multilayer (ML) structure measured without current compliance for non-volatile memory applications. The SiO2/Si ML structure was thermally annealed to induce the formation of… read more here.
Keywords: conduction; resistance state; sio2 multilayer; resistive switching ... See more keywords
In-plane rotation and transition from rectification to bipolar resistive switching in ZnO/SrTiO3:Nb heterojunctions by substrate pretreatment
Sign Up to like & getrecommendations! Published in 2019 at "RSC Advances"
DOI: 10.1039/c9ra07252g
Abstract: The growth behavior and electrical transport properties of ZnO films was found to be strongly dependent on the deionized water soaking treatment of 0.7 wt% (111) SrTiO3:Nb substrates. read more here.
Keywords: transition rectification; plane rotation; rectification bipolar; srtio3 ... See more keywords
Coexistence of unipolar and bipolar resistive switching behaviors in NiFe2O4 thin film devices by doping Ag nanoparticles
Sign Up to like & getrecommendations! Published in 2018 at "Journal of Applied Physics"
DOI: 10.1063/1.5018808
Abstract: The coexistence of unipolar and bipolar resistive switching (RS) behaviors of Ag-nanoparticles (Ag-NPs) doped NiFe2O4 (NFO) based memory devices was investigated. The switching voltages of required operations in the unipolar mode were smaller than those… read more here.
Keywords: coexistence unipolar; unipolar bipolar; resistive switching; bipolar resistive ... See more keywords
Bipolar resistive switching of Pt/Ga2O3-x/SiC/Pt thin film with ultrahigh OFF/ON resistance ratios.
Sign Up to like & getrecommendations! Published in 2020 at "Nanotechnology"
DOI: 10.1088/1361-6528/ab758d
Abstract: A multiple-layer thin film of Pt/Ga2O3-x/SiC/Pt based resistive switching is systematically investigated. An excellent bipolar resistive switching behavior is observed with a high resistance switching ratio of OFF/ON up to 103. The current-voltage relations plot… read more here.
Keywords: switching ga2o3; resistance; ga2o3 sic; resistive switching ... See more keywords
Bipolar resistive switching in HoCrO3 thin films.
Sign Up to like & getrecommendations! Published in 2020 at "Nanotechnology"
DOI: 10.1088/1361-6528/ab9328
Abstract: We report on the resistive switching characteristics of HoCrO3 (HCO) based memristor device. The device Ag/HCO/FTO shows a stable bipolar resistive switching with a good ON/OFF resistance ratio between high resistance state (HRS) and low… read more here.
Keywords: switching hocro3; hocro3 thin; resistance; resistive switching ... See more keywords