One bipolar transistor selector - One resistive random access memory device for cross bar memory array
Sign Up to like & getrecommendations! Published in 2017 at "AIP Advances"
DOI: 10.1063/1.4994948
Abstract: A bipolar transistor selector was connected in series with a resistive switching memory device to study its memory characteristics for its application in cross bar array memory. The metal oxide based p-n-p bipolar transistor selector… read more here.
Keywords: cross bar; transistor selector; memory; bipolar transistor ... See more keywords
A low-loss variable-doped trench-insulated gate bipolar transistor with reduced on-state voltage
Sign Up to like & getrecommendations! Published in 2021 at "Semiconductor Science and Technology"
DOI: 10.1088/1361-6641/abf909
Abstract: The performance of a superjunction trench-insulated gate bipolar transistor with variable vertical doping in the epitaxial region along with variation in the collector layer is investigated. The concept of vertical variation transfers the avalanche multiplication… read more here.
Keywords: voltage; bipolar transistor; insulated gate; trench insulated ... See more keywords
Considerations for the Design of a Heterojunction Bipolar Transistor Solar Cell
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Journal of Photovoltaics"
DOI: 10.1109/jphotov.2019.2945914
Abstract: Independent current extraction in multijunction solar cells has gained attention in recent years because it can deliver higher annual energy yield and can work for more semiconductor material combinations than the more established series-connected multijunction… read more here.
Keywords: solar cell; cell; heterojunction bipolar; transistor ... See more keywords
Lifetime Estimation of Insulated Gate Bipolar Transistor Modules Using Two-Step Bayesian Estimation
Sign Up to like & getrecommendations! Published in 2017 at "IEEE Transactions on Device and Materials Reliability"
DOI: 10.1109/tdmr.2017.2694158
Abstract: The reliability of the package of insulated gate bipolar transistor (IGBT) modules has been of great concern. Some fatigue-related failure mechanisms are commonly observed under power cycling conditions. An approach of a multi-step Bayesian estimation… read more here.
Keywords: lifetime estimation; estimation; bipolar transistor; insulated gate ... See more keywords
A Network Topological Approach-Based Transient 3-D Electrothermal Model of Insulated-Gate Bipolar Transistor
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Transactions on Magnetics"
DOI: 10.1109/tmag.2019.2946283
Abstract: With the continuous miniaturization and rapid increase in the power ratings of an insulated-gate bipolar transistor (IGBT), the exact junction temperature becomes one of the critical performance parameters in evaluating the reliability of the transistor.… read more here.
Keywords: insulated gate; model; bipolar transistor; gate bipolar ... See more keywords