Experimental DC extraction of the thermal resistance of bipolar transistors taking into account the Early effect
Sign Up to like & getrecommendations! Published in 2017 at "Solid-state Electronics"
DOI: 10.1016/j.sse.2016.10.041
Abstract: Abstract This paper presents three methods to experimentally extract the thermal resistance of bipolar transistors taking into account the Early effect. The approaches are improved variants of recently-proposed techniques relying on common-base DC measurements. The… read more here.
Keywords: taking account; thermal resistance; account early; bipolar transistors ... See more keywords
GaAsP/InGaP heterojunction bipolar transistors grown by MOCVD
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Applied Physics"
DOI: 10.1063/1.4974969
Abstract: Heterojunction bipolar transistors with GaAsxP1−x bases and collectors and InyGa1−yP emitters were grown on GaAs substrates via metalorganic chemical vapor deposition, fabricated using conventional techniques, and electrically tested. Four different GaAsxP1−x compositions were used, ranging… read more here.
Keywords: ingap; gaasp ingap; heterojunction bipolar; bipolar transistors ... See more keywords
MOCVD growth of InGaP/GaAs heterojunction bipolar transistors on 200 mm Si wafers for heterogeneous integration with Si CMOS
Sign Up to like & getrecommendations! Published in 2018 at "Semiconductor Science and Technology"
DOI: 10.1088/1361-6641/aae247
Abstract: Heterojunction bipolar transistors (HBTs) with an In0.49Ga0.51P emitter and a GaAs base and collector were fabricated on epitaxial films grown directly onto Si substrates using a thin germanium (100%) buffer layer. All the materials (Ge,… read more here.
Keywords: integration; heterojunction bipolar; cmos; gaas ... See more keywords
Direct parameter extraction method for InP heterojunction bipolar transistors based on the combination of T- and π-models up to 110 GHz
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DOI: 10.1088/1361-6641/ab5917
Abstract: A parameter-extraction approach for determination of the small-signal equivalent circuit model for InP/InGaAs double heterojunction bipolar transistors (HBTs) is presented. This method combines the advantages of the conventional T- and π-type equivalent-circuit topologies. All the… read more here.
Keywords: parameter extraction; heterojunction bipolar; bipolar transistors;
Mixed-Mode Stress in Silicon–Germanium Heterostructure Bipolar Transistors: Insights From Experiments and Simulations
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DOI: 10.1109/tdmr.2019.2912853
Abstract: Recently, a wide class of market segments (e.g., health, material science, security, and communications) is tackled by circuits fabricated in BiCMOS technology, integrating silicon–germanium (SiGe) heterojunction bipolar transistors (HBTs) and passives. Currently, the reliability of… read more here.
Keywords: bipolar transistors; mixed mode; silicon germanium; stress ... See more keywords
ELDRS Susceptibility of Bipolar Transistors and Integrated Circuits During Low-Temperature Irradiation
Sign Up to like & getrecommendations! Published in 2017 at "IEEE Transactions on Nuclear Science"
DOI: 10.1109/tns.2017.2677261
Abstract: The enhanced low dose rate sensitivity (ELDRS) susceptibility of 2N2222 bipolar transistors and LM111 voltage comparators was investigated during irradiation at low temperature and compared with corresponding room-temperature data. The possible physical mechanism of the… read more here.
Keywords: low temperature; irradiation; temperature; eldrs susceptibility ... See more keywords