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Published in 2020 at "Ceramics International"
DOI: 10.1016/j.ceramint.2020.01.001
Abstract: Abstract The continuous device scaling of dynamic random access memories has been increasing demands for the development of dielectric materials with high dielectric constants and low leakage currents. In this study, we developed MgO thin…
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Keywords:
thin films;
using bis;
atomic layer;
bis ethylcyclopentadienyl ... See more keywords