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Published in 2018 at "Applied Physics Letters"
DOI: 10.1063/1.5031013
Abstract: We extract the conductance fluctuations and study their magnetic field dependence in the gate-dependent transport of topological electrons in bulk-insulating BiSbTeSe2 devices. With the increasing magnetic field, the conductance fluctuation magnitudes are found to reduce…
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Keywords:
bisbtese2 devices;
conductance;
conductance fluctuations;
time reversal ... See more keywords