Bismuthene: Epitaxially grown on MoTe2 and its grain boundary
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DOI: 10.1016/j.jcrysgro.2020.125787
Abstract: Abstract The growth of bismuthene on MoTe2 is investigated based on first-principles calculation, systematically. The results show that the buckled bismuthene can be grown on MoTe2 at 300 K and can keep stable at 450 K, of… read more here.
Keywords: bismuthene epitaxially; grain boundary; epitaxially grown; bismuthene ... See more keywords