Total ionizing radiation-induced read bit-errors in toggle magnetoresistive random-access memory devices*
Sign Up to like & getrecommendations! Published in 2017 at "Chinese Physics B"
DOI: 10.1088/1674-1056/26/8/087501
Abstract: The 1-Mb and 4-Mb commercial toggle magnetoresistive random-access memories (MRAMs) with and 0.18- complementary metal–oxide–semiconductor (CMOS) process respectively and different magnetic tunneling junctions (MTJs) are irradiated with a Cobalt-60 gamma source. The electrical functions of… read more here.
Keywords: bit errors; random access; toggle magnetoresistive; read bit ... See more keywords
FeFET-Based Binarized Neural Networks Under Temperature-Dependent Bit Errors
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DOI: 10.1109/tc.2021.3104736
Abstract: Ferroelectric FET (FeFET) is a highly promising emerging non-volatile memory (NVM) technology, especially for binarized neural network (BNN) inference on the low-power edge. The reliability of such devices, however, inherently depends on temperature. Hence, changes… read more here.
Keywords: temperature dependent; bit; dependent bit; bit error ... See more keywords
An Empirical Study of the Impact of Single and Multiple Bit-Flip Errors in Programs
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DOI: 10.1109/tdsc.2020.3043023
Abstract: Recent studies have shown that technology and voltage scaling are expected to increase the likelihood that particle-induced soft errors manifest as multiple-bit errors. This raises concerns about the validity of using single bit-flips in fault… read more here.
Keywords: bit; impact; single bit; multiple bit ... See more keywords