Improved Model for Ionization-Induced Surface Recombination Current in p-n-p BJTs
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DOI: 10.1109/tns.2020.3004710
Abstract: The p-n-p bipolar junction transistors (BJTs) are susceptible to surface recombination in both the emitter-base depletion and neutral base (NB) regions when their passivation oxide layers are damaged by ionization irradiation, leading to an increase… read more here.
Keywords: bjts; excess base; model; base current ... See more keywords