Articles with "black arsenic" as a keyword



Black Arsenic: A Layered Semiconductor with Extreme In-Plane Anisotropy.

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Published in 2018 at "Advanced materials"

DOI: 10.1002/adma.201800754

Abstract: 2D layered materials have emerged in recent years as a new platform to host novel electronic, optical, or excitonic physics and develop unprecedented nanoelectronic and energy applications. By definition, these materials are strongly anisotropic between… read more here.

Keywords: black arsenic; extreme plane; layered semiconductor; plane anisotropy ... See more keywords

Atomic and Electronic Structure of Black Arsenic and Ambient Stability Studied by Analytical STEM

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Published in 2020 at "Microscopy and Microanalysis"

DOI: 10.1017/s1431927620016050

Abstract: anisotropic materials properties to the thickness-dependent electronic structures. 3-6 To better understand the new material and maximize its utility, fundamental structural and electronic characterization is essential. Here, analytical STEM is utilized to explore the nature… read more here.

Keywords: atomic electronic; stem; black arsenic; analytical stem ... See more keywords

Structural and Thermoelectric Properties of Black Arsenic–Phosphorus

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Published in 2020 at "ACS Applied Energy Materials"

DOI: 10.1021/acsaem.0c01172

Abstract: Here, we report the structural and temperature-dependent transport properties of AsxP1–x (x = 0, 0.2, 0.5, 0.83, and 1) alloys. It is observed that black phosphorous-related phonon modes in the all... read more here.

Keywords: structural thermoelectric; black arsenic; properties black; thermoelectric properties ... See more keywords

Impact of the Channel Thickness on the Photoresponse of Black Arsenic Mid-Infrared Photodetectors.

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Published in 2022 at "ACS applied materials & interfaces"

DOI: 10.1021/acsami.2c05704

Abstract: Recently explored black arsenic is a layered two-dimensional low-symmetry semiconducting material that, owing to its inherent narrow bandgap (∼0.31 eV) in its bulk form, is attractive for mid-infrared optoelectronics. Several studies have been conducted on… read more here.

Keywords: mid infrared; thickness photoresponse; black arsenic; channel thickness ... See more keywords

Black Arsenic-Phosphorus Nanosheets for Highly Responsive Photodetection and Dual-Wavelength Ultrafast Pulse Generation at Telecommunication Bands.

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Published in 2022 at "ACS applied materials & interfaces"

DOI: 10.1021/acsami.2c10857

Abstract: Black arsenic-phosphorus (b-AsP), an alloy containing black phosphorus and arsenic in the form of b-AsxP1-x, has a broadly tunable band gap changing with the chemical ratios of As and P. Although mid-infrared photodetectors and mode-locked… read more here.

Keywords: telecommunication bands; arsenic phosphorus; phosphorus; black arsenic ... See more keywords
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Black arsenic: a new synthetic method by catalytic crystallization of arsenic glass.

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Published in 2020 at "Nanoscale"

DOI: 10.1039/c9nr09627b

Abstract: Two-dimensional structures of elemental analogues of graphene have received much attention in recent years due to their outstanding properties. Black arsenic is a metastable form of arsenic with an orthorhombic structure similar to black phosphorus.… read more here.

Keywords: black arsenic; method catalytic; crystallization; synthetic method ... See more keywords

Potential outstanding physical properties of novel black arsenic phosphorus As0.25P0.75/As0.75P0.25 phases: a first-principles investigation

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Published in 2022 at "RSC Advances"

DOI: 10.1039/d1ra08154c

Abstract: Black arsenic phosphorus As0.5P0.5 has been studied as an excellent candidate for electronic and optoelectronic applications. At the same time, the physical properties of AsxP1−x alloys with other compositions were not investigated. In this work,… read more here.

Keywords: 25p0 as0; arsenic phosphorus; phosphorus; black arsenic ... See more keywords

Gate controllable band alignment transition in 2D black-arsenic/WSe2 heterostructure

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Published in 2023 at "Applied Physics Reviews"

DOI: 10.1063/5.0147499

Abstract: Controlling the manner of band alignment of heterostructures increases design freedom with novel physical properties, enables the design of new functional devices, and improves device performance, but the lattice matching limits the diversity of traditional… read more here.

Keywords: band; band alignment; black arsenic; vdwhs ... See more keywords

Electronic and optical properties of Janus black arsenic-phosphorus AsP quantum dots under magnetic field

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Published in 2022 at "Nanotechnology"

DOI: 10.1088/1361-6528/ac6007

Abstract: By utilizing the tight-binding method, the electronic spectrum and states distribution of square Janus monolayer black arsenic phosphorus (b-AsP) quantum dots (QDs) in the presence of a perpendicular magnetic field are explored. Strong in-gap states… read more here.

Keywords: arsenic phosphorus; black arsenic; asp; magnetic field ... See more keywords

Realization of robust Ohmic contact for semiconducting black arsenic by coupling with graphene

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Published in 2024 at "Chinese Physics B"

DOI: 10.1088/1674-1056/ada0b3

Abstract: Ohmic contacts are fundamental components in semiconductor technology, facilitating efficient electrical connection and excellent device performance. We employ first-principles calculations to show that semimetallic graphene is a natural Ohmic contact partner of monolayer semiconducting black… read more here.

Keywords: ohmic contact; realization robust; black arsenic; semiconducting black ... See more keywords

Pressure-induced structural and superconducting transitions in black arsenic

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Published in 2025 at "Physical Review B"

DOI: 10.1103/physrevb.111.064507

Abstract: We report high-pressure Raman spectra and resistance measurements of black arsenic (b-As) up to 58 GPa, along with phonon density of states (DOS) and enthalpy calculations for four reported arsenic phases up to 50 GPa.… read more here.

Keywords: pressure; structural superconducting; pressure induced; black arsenic ... See more keywords