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1
Published in 2018 at "Advanced materials"
DOI: 10.1002/adma.201800754
Abstract: 2D layered materials have emerged in recent years as a new platform to host novel electronic, optical, or excitonic physics and develop unprecedented nanoelectronic and energy applications. By definition, these materials are strongly anisotropic between…
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Keywords:
black arsenic;
extreme plane;
layered semiconductor;
plane anisotropy ... See more keywords
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1
Published in 2020 at "Microscopy and Microanalysis"
DOI: 10.1017/s1431927620016050
Abstract: anisotropic materials properties to the thickness-dependent electronic structures. 3-6 To better understand the new material and maximize its utility, fundamental structural and electronic characterization is essential. Here, analytical STEM is utilized to explore the nature…
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Keywords:
atomic electronic;
stem;
black arsenic;
analytical stem ... See more keywords
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Published in 2020 at "ACS Applied Energy Materials"
DOI: 10.1021/acsaem.0c01172
Abstract: Here, we report the structural and temperature-dependent transport properties of AsxP1–x (x = 0, 0.2, 0.5, 0.83, and 1) alloys. It is observed that black phosphorous-related phonon modes in the all...
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Keywords:
structural thermoelectric;
black arsenic;
properties black;
thermoelectric properties ... See more keywords
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Published in 2022 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.2c05704
Abstract: Recently explored black arsenic is a layered two-dimensional low-symmetry semiconducting material that, owing to its inherent narrow bandgap (∼0.31 eV) in its bulk form, is attractive for mid-infrared optoelectronics. Several studies have been conducted on…
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Keywords:
mid infrared;
thickness photoresponse;
black arsenic;
channel thickness ... See more keywords
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Published in 2022 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.2c10857
Abstract: Black arsenic-phosphorus (b-AsP), an alloy containing black phosphorus and arsenic in the form of b-AsxP1-x, has a broadly tunable band gap changing with the chemical ratios of As and P. Although mid-infrared photodetectors and mode-locked…
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Keywords:
telecommunication bands;
arsenic phosphorus;
phosphorus;
black arsenic ... See more keywords
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Published in 2020 at "Nanoscale"
DOI: 10.1039/c9nr09627b
Abstract: Two-dimensional structures of elemental analogues of graphene have received much attention in recent years due to their outstanding properties. Black arsenic is a metastable form of arsenic with an orthorhombic structure similar to black phosphorus.…
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Keywords:
black arsenic;
method catalytic;
crystallization;
synthetic method ... See more keywords
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2
Published in 2022 at "RSC Advances"
DOI: 10.1039/d1ra08154c
Abstract: Black arsenic phosphorus As0.5P0.5 has been studied as an excellent candidate for electronic and optoelectronic applications. At the same time, the physical properties of AsxP1−x alloys with other compositions were not investigated. In this work,…
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Keywords:
25p0 as0;
arsenic phosphorus;
phosphorus;
black arsenic ... See more keywords
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2
Published in 2023 at "Applied Physics Reviews"
DOI: 10.1063/5.0147499
Abstract: Controlling the manner of band alignment of heterostructures increases design freedom with novel physical properties, enables the design of new functional devices, and improves device performance, but the lattice matching limits the diversity of traditional…
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Keywords:
band;
band alignment;
black arsenic;
vdwhs ... See more keywords
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1
Published in 2022 at "Nanotechnology"
DOI: 10.1088/1361-6528/ac6007
Abstract: By utilizing the tight-binding method, the electronic spectrum and states distribution of square Janus monolayer black arsenic phosphorus (b-AsP) quantum dots (QDs) in the presence of a perpendicular magnetic field are explored. Strong in-gap states…
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Keywords:
arsenic phosphorus;
black arsenic;
asp;
magnetic field ... See more keywords
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Published in 2024 at "Chinese Physics B"
DOI: 10.1088/1674-1056/ada0b3
Abstract: Ohmic contacts are fundamental components in semiconductor technology, facilitating efficient electrical connection and excellent device performance. We employ first-principles calculations to show that semimetallic graphene is a natural Ohmic contact partner of monolayer semiconducting black…
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Keywords:
ohmic contact;
realization robust;
black arsenic;
semiconducting black ... See more keywords
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Published in 2025 at "Physical Review B"
DOI: 10.1103/physrevb.111.064507
Abstract: We report high-pressure Raman spectra and resistance measurements of black arsenic (b-As) up to 58 GPa, along with phonon density of states (DOS) and enthalpy calculations for four reported arsenic phases up to 50 GPa.…
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Keywords:
pressure;
structural superconducting;
pressure induced;
black arsenic ... See more keywords