AlGaN-based solar-blind UV heterojunction bipolar phototransistors: structural design, epitaxial growth, and optoelectric properties
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DOI: 10.1039/d3tc00317e
Abstract: The structure of the AlGaN-based solar-blind UV heterojunction bipolar phototransistor (HBPT) with an AlGaN-based multiple quantum wells (MQWs) layer as the light absorption layer is proposed in this paper. On... read more here.
Keywords: heterojunction bipolar; blind heterojunction; algan based; solar blind ... See more keywords