Effects of He ion energy on blistering characteristics of Si sequentially implanted with H and He ions in various sequences
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DOI: 10.1016/j.surfcoat.2018.01.085
Abstract: Abstract As compared to the conventional smart-cut technology based on single H ion implantation, sequential implantation of H and He ions has been demonstrated to be effective in reducing the implantation fluence and the thermal… read more here.
Keywords: energy; blistering characteristics; sequential implantation; ion energy ... See more keywords