Normally-off β-Ga2O3 MOSFET with an Epitaxial Drift Layer
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DOI: 10.3390/mi13081185
Abstract: A normally-off β-Ga2O3 metal-oxide-semiconductor field-effect transistor (MOSFET) is proposed using a technology computer-aided design (TCAD) device simulation, which employs an epitaxial drift layer grown on an n-type low-doped body layer. The low-doped body layer under… read more here.
Keywords: body layer; epitaxial drift; layer; drift layer ... See more keywords