Carbon dangling-bond center (carbon Pb center) at 4H-SiC(0001)/SiO2 interface
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DOI: 10.1063/1.5143555
Abstract: We identify a carbon dangling-bond center intrinsically formed at thermally oxidized 4H-SiC(0001)/SiO2 interfaces. Our electrically detected-magnetic-resonance spectroscopy and first-principles calculations demonstrate that this center, which we name “the PbC center,” is formed at a carbon… read more here.
Keywords: dangling bond; sic 0001; carbon; bond center ... See more keywords