Atomic-Scale Study of Intrinsic Defects Suppressing the Thermal Conductivity of Boron Arsenide
Sign Up to like & getrecommendations! Published in 2019 at "Microscopy and Microanalysis"
DOI: 10.1017/s1431927619005440
Abstract: As microelectronic devices become faster and smaller, materials with ultrahigh thermal conductivity (κ) are becoming important for new generation electronic devices. Recently, based on first-principles calculations, boron arsenide (BAs) with a zinc blende-type cubic structure… read more here.
Keywords: intrinsic defects; scale study; atomic scale; boron arsenide ... See more keywords
Band structure and carrier effective masses of boron arsenide: Effects of quasiparticle and spin-orbit coupling corrections
Sign Up to like & getrecommendations! Published in 2019 at "Applied Physics Letters"
DOI: 10.1063/1.5062845
Abstract: We determine the fundamental electronic and optical properties of the high-thermal-conductivity III–V semiconductor boron arsenide (BAs) using density functional and many body perturbation theory including quasiparticle and spin-orbit coupling corrections. We find that the fundamental… read more here.
Keywords: quasiparticle spin; carrier effective; boron arsenide; orbit coupling ... See more keywords
High ambipolar mobility in cubic boron arsenide revealed by transient reflectivity microscopy
Sign Up to like & getrecommendations! Published in 2022 at "Science"
DOI: 10.1126/science.abn4727
Abstract: Semiconducting cubic boron arsenide (c-BAs) has been predicted to have carrier mobility of 1400 square centimeters per volt-second for electrons and 2100 square centimeters per volt-second for holes at room temperature. Using pump-probe transient reflectivity… read more here.
Keywords: mobility; high ambipolar; ambipolar mobility; microscopy ... See more keywords