Role of Boron Element on the Electronic Properties of α-Nb5Si3: A First-Principle Study
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DOI: 10.1007/s11664-017-5941-7
Abstract: Transition metal silicides (TMSis) are attracting increasing interest from the microelectronics and nanoelectronic industries. In this paper, we use the first-principles method to investigate the B-doped mechanism and the influence of B on the electronic… read more here.
Keywords: role boron; element electronic; boron element; electronic properties ... See more keywords