A UV-enhanced, self-powered detector with graphene p–n junction grown in situ on SiC(0001) with periodic boron ion modulation
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DOI: 10.1063/5.0056129
Abstract: Graphene p–n junctions hold great potential in the fields of electronic and optoelectronic devices. Here, we develop a scheme of the in situ growth of an epitaxial graphene (EG) lateral p–n junction on a semi-insulating… read more here.
Keywords: enhanced self; sic 0001; graphene; boron ion ... See more keywords