A Breakdown Enhanced AlGaN/GaN Schottky Barrier Diode with the T-Anode Position Deep into the Bottom Buffer Layer
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DOI: 10.3390/mi10020091
Abstract: In this paper, an AlGaN/GaN Schottky barrier diode (SBD) with the T-anode located deep into the bottom buffer layer in combination with field plates (TAI-BBF FPs SBD) is proposed. The electrical characteristics of the proposed… read more here.
Keywords: schottky barrier; deep bottom; gan schottky; algan gan ... See more keywords