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Published in 2020 at "Microelectronic Engineering"
DOI: 10.1016/j.mee.2019.111194
Abstract: Abstract In this work, we study the impact of roughness of TiN bottom electrode on the forming voltage of 1R TiN/HfO2/Ti/TiN based ReRAM devices. A novel and atypical strategy is proposed to induce a controlled…
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Keywords:
impact roughness;
bottom electrode;
forming voltage;
tin ... See more keywords
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Published in 2017 at "Nanoscale"
DOI: 10.1039/c7nr03106h
Abstract: Resistive Random Access Memory (RRAM) shows great potential to be used as an artificial synapse for neuromorphic applications. The resistance can be gradually reduced during reset, which can enable enough states to mimic the "forgetting"…
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Keywords:
synapse;
mode;
bilayer graphene;
artificial synapse ... See more keywords
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Published in 2021 at "Materials Chemistry Frontiers"
DOI: 10.1039/d1qm00151e
Abstract: Utilization of charge transporting busbars integrated as a top electrode overcomes a great trade-off between the AVT and PCE of semitransparent devices.
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Keywords:
electrode optimization;
electrode;
enabled high;
bottom electrode ... See more keywords
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Published in 2023 at "IEEE Electron Device Letters"
DOI: 10.1109/led.2023.3269070
Abstract: To satisfy the demand of high-speed and low-power non-volatile memory in the field of integrated circuits for in-memory computing, HfO2-based ferroelectric tunnel junctions have been development with different film thickness and bottom electrodes. In this…
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Keywords:
bottom electrode;
bottom;
bottom electrodes;
phase ... See more keywords