Thickness Scaling of Integrated Pt/(Al 0.9 Sc 0.1 )N/Pt Capacitor Stacks to 30 nm
Sign Up to like & getrecommendations! Published in 2025 at "Advanced Electronic Materials"
DOI: 10.1002/aelm.202500451
Abstract: The total thickness scaling of electrodes and the (Al0.9Sc0.1)N layer is evaluated for ferroelectric memory applications. The good crystal orientation and large remanent polarization (Pr) above 100 µC cm−2 are obtained for 160‐nm‐thick (Al0.9Sc0.1)N films… read more here.
Keywords: thickness scaling; bottom electrode; scaling integrated; electrode ... See more keywords
Impact of roughness of TiN bottom electrode on the forming voltage of HfO2 based resistive memories
Sign Up to like & getrecommendations! Published in 2020 at "Microelectronic Engineering"
DOI: 10.1016/j.mee.2019.111194
Abstract: Abstract In this work, we study the impact of roughness of TiN bottom electrode on the forming voltage of 1R TiN/HfO2/Ti/TiN based ReRAM devices. A novel and atypical strategy is proposed to induce a controlled… read more here.
Keywords: impact roughness; bottom electrode; forming voltage; tin ... See more keywords
A novel artificial synapse with dual modes using bilayer graphene as the bottom electrode.
Sign Up to like & getrecommendations! Published in 2017 at "Nanoscale"
DOI: 10.1039/c7nr03106h
Abstract: Resistive Random Access Memory (RRAM) shows great potential to be used as an artificial synapse for neuromorphic applications. The resistance can be gradually reduced during reset, which can enable enough states to mimic the "forgetting"… read more here.
Keywords: synapse; mode; bilayer graphene; artificial synapse ... See more keywords
Top and bottom electrode optimization enabled high-performance flexible and semi-transparent organic solar cells
Sign Up to like & getrecommendations! Published in 2021 at "Materials Chemistry Frontiers"
DOI: 10.1039/d1qm00151e
Abstract: Utilization of charge transporting busbars integrated as a top electrode overcomes a great trade-off between the AVT and PCE of semitransparent devices. read more here.
Keywords: electrode optimization; electrode; enabled high; bottom electrode ... See more keywords
Impact of bottom electrode materials on the crystallographic orientation and ferroelectric performance of Al0.8Sc0.2N thin films.
Sign Up to like & getrecommendations! Published in 2025 at "Nanoscale"
DOI: 10.1039/d5nr03449c
Abstract: Aluminum scandium nitride (Al1-xScxN) has received widespread attention for its robust ferroelectric properties, whereas its cyclic failure mechanism remains elusive. In this paper, the structure and ferroelectric properties of c-axis preferred growth Al0.8Sc0.2N films on… read more here.
Keywords: bottom electrode; thin films; electrode; electrode materials ... See more keywords
Ferroelectric memory devices using hafnium aluminum oxides and remote plasma-treated electrodes for sustainable energy-efficient electronics
Sign Up to like & getrecommendations! Published in 2024 at "Materials Research Express"
DOI: 10.1088/2053-1591/ad4005
Abstract: In this work, we adopt a low-temperature sustainable plasma treatment approach for the fabrication of ferroelectric memory devices. From our experimental results, we found that the ferroelectric polarization characteristics of HfAlOx ferroelectric device could be… read more here.
Keywords: temperature; bottom electrode; memory devices; ferroelectric memory ... See more keywords
Stabilizing the Ferroelectric Phase in HfAlO Ferroelectric Tunnel Junction With Different Bottom Electrodes
Sign Up to like & getrecommendations! Published in 2023 at "IEEE Electron Device Letters"
DOI: 10.1109/led.2023.3269070
Abstract: To satisfy the demand of high-speed and low-power non-volatile memory in the field of integrated circuits for in-memory computing, HfO2-based ferroelectric tunnel junctions have been development with different film thickness and bottom electrodes. In this… read more here.
Keywords: bottom electrode; bottom; bottom electrodes; phase ... See more keywords
Boost Antiferroelectricity in ZrO₂-Based Capacitors by Ozone Treatment on Bottom Electrode
Sign Up to like & getrecommendations! Published in 2024 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2024.3480042
Abstract: Boosted antiferroelectricity is achieved in antiferroelectric (AFE) ZrO2-based capacitors through the O3 treatment on bottom electrode (BE) in this study. The experimentally measured results indicate that the BE O3 treatment enhances the AFE polarization (>138%)… read more here.
Keywords: treatment bottom; treatment; antiferroelectricity; bottom electrode ... See more keywords