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Published in 2017 at "Thin Solid Films"
DOI: 10.1016/j.tsf.2017.05.027
Abstract: Abstract DC-sputtered TiN and TiN/Ti conductive layers grown on Si substrates were investigated as bottom electrodes with the aim of realizing phase transition VO 2 -based layered type devices. The VO 2 films prepared at…
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Keywords:
tin tin;
transition;
phase transition;
bottom electrodes ... See more keywords
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Published in 2023 at "IEEE Electron Device Letters"
DOI: 10.1109/led.2023.3269070
Abstract: To satisfy the demand of high-speed and low-power non-volatile memory in the field of integrated circuits for in-memory computing, HfO2-based ferroelectric tunnel junctions have been development with different film thickness and bottom electrodes. In this…
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Keywords:
bottom electrode;
bottom;
bottom electrodes;
phase ... See more keywords
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Published in 2020 at "Materials"
DOI: 10.3390/ma13132968
Abstract: The discovery of ferroelectricity in HfO2-based materials in 2011 provided new research directions and opportunities. In particular, for atomic layer deposited Hf0.5Zr0.5O2 (HZO) films, it is possible to obtain homogenous thin films with satisfactory ferroelectric…
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Keywords:
thin films;
top bottom;
bottom electrodes;
tin top ... See more keywords
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3
Published in 2023 at "Nanomaterials"
DOI: 10.3390/nano13061127
Abstract: The effects of electrode materials (top and bottom) and the operating ambiances (open-air and vacuum) on the MgFx-based resistive random-access memory (RRAM) devices are studied. Experiment results show that the device’s performance and stability depend…
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Keywords:
mgfx based;
bottom;
surface roughness;
bottom electrodes ... See more keywords