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   Articles with "bottom electrodes" as a keyword



Modulation of Oxygen Content and Ferroelectricity in Sputtered Hafnia‐Zirconia by Engineering of Tungsten Oxide Bottom Electrodes

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recommendations! Published in 2024 at "Advanced Electronic Materials"

DOI: 10.1002/aelm.202300798

Abstract: The well‐developed high‐k technologies ease the integration complexity for HfO2‐based ferroelectric (FE) devices in the complementary metal‐oxide semiconductor processes. Sputtered HfxZr(1‐x)O2 (HZO) FEs have proven their thermal compatibility in back‐end‐of‐line (BEOL) integration processes with high… read more here.

Keywords: hzo; bottom electrodes; oxygen content; bottom ... See more keywords
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Comparative study of TiN and TiN/Ti as bottom electrodes for layered type devices with phase transition VO 2 films

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recommendations! Published in 2017 at "Thin Solid Films"

DOI: 10.1016/j.tsf.2017.05.027

Abstract: Abstract DC-sputtered TiN and TiN/Ti conductive layers grown on Si substrates were investigated as bottom electrodes with the aim of realizing phase transition VO 2 -based layered type devices. The VO 2 films prepared at… read more here.

Keywords: tin tin; transition; phase transition; bottom electrodes ... See more keywords

Fully hardware-oriented physical reservoir computing using 3D vertical resistive switching memory with different bottom electrodes.

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recommendations! Published in 2025 at "Materials horizons"

DOI: 10.1039/d5mh00275c

Abstract: Reservoir computing (RC) is a promising machine learning paradigm that processes input data using a fixed random network. However, implementing both reservoir and readout layers typically requires multiple devices and additional fabrication steps. To overcome… read more here.

Keywords: different bottom; bottom electrodes; memory; reservoir ... See more keywords

Stabilizing the Ferroelectric Phase in HfAlO Ferroelectric Tunnel Junction With Different Bottom Electrodes

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recommendations! Published in 2023 at "IEEE Electron Device Letters"

DOI: 10.1109/led.2023.3269070

Abstract: To satisfy the demand of high-speed and low-power non-volatile memory in the field of integrated circuits for in-memory computing, HfO2-based ferroelectric tunnel junctions have been development with different film thickness and bottom electrodes. In this… read more here.

Keywords: bottom electrode; bottom; bottom electrodes; phase ... See more keywords
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A Comprehensive Study on the Effect of TiN Top and Bottom Electrodes on Atomic Layer Deposited Ferroelectric Hf0.5Zr0.5O2 Thin Films

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recommendations! Published in 2020 at "Materials"

DOI: 10.3390/ma13132968

Abstract: The discovery of ferroelectricity in HfO2-based materials in 2011 provided new research directions and opportunities. In particular, for atomic layer deposited Hf0.5Zr0.5O2 (HZO) films, it is possible to obtain homogenous thin films with satisfactory ferroelectric… read more here.

Keywords: thin films; top bottom; bottom electrodes; tin top ... See more keywords

Effects of Top and Bottom Electrodes Materials and Operating Ambiance on the Characteristics of MgFx Based Bipolar RRAMs

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recommendations! Published in 2023 at "Nanomaterials"

DOI: 10.3390/nano13061127

Abstract: The effects of electrode materials (top and bottom) and the operating ambiances (open-air and vacuum) on the MgFx-based resistive random-access memory (RRAM) devices are studied. Experiment results show that the device’s performance and stability depend… read more here.

Keywords: mgfx based; bottom; surface roughness; bottom electrodes ... See more keywords