Engineering antiphase boundaries in epitaxial SrTiO3 to achieve forming free memristive devices
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DOI: 10.1063/1.5125211
Abstract: We here present a method to engineer Ruddlesden-Popper-type antiphase boundaries in stoichiometric homoepitaxial SrTiO3 thin films. This is achieved by using a substrate with an intentionally high ... read more here.
Keywords: antiphase; boundaries epitaxial; engineering antiphase; antiphase boundaries ... See more keywords