Articles with "boundary passivation" as a keyword



Solvation‐Driven Grain Boundary Passivation Improving the Performance of Perovskite Solar Cells

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Published in 2024 at "Advanced Energy Materials"

DOI: 10.1002/aenm.202303387

Abstract: The efficiency of perovskite solar cells (PSCs) is hindered by substantial defects within the grain boundaries (GBs) of polycrystalline perovskite films. Conventional post‐treatment strategies struggle to precisely repair these defects at GBs. Here, a targeted… read more here.

Keywords: solar cells; improving performance; boundary passivation; grain boundary ... See more keywords

Hexamethylenetetramine-mediated growth of grain-boundary-passivation CH3NH3PbI3 for highly reproducible and stable perovskite solar cells

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Published in 2018 at "Journal of Power Sources"

DOI: 10.1016/j.jpowsour.2017.12.011

Abstract: Abstract Simultaneously achieving the long-term device stability and reproducibility has proven challenging in perovskite solar cells because solution-processing produced perovskite film with grain boundary is sensitive to moisture. Herein, we develop a hexamethylenetetramine (HMTA)-mediated one-step… read more here.

Keywords: grain boundary; ch3nh3pbi3; boundary passivation; perovskite solar ... See more keywords

Enhancing the Performance of Inverted Perovskite Solar Cells via Grain Boundary Passivation with Carbon Quantum Dots.

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Published in 2019 at "ACS applied materials & interfaces"

DOI: 10.1021/acsami.8b18867

Abstract: Nonradiative recombination, the main energy loss channel for open circuit voltage ( Voc), is one of the crucial problems for achieving high power conversion efficiency (PCE) in inverted perovskite solar cells (PSCs). Usually, grain boundary… read more here.

Keywords: perovskite solar; boundary passivation; grain boundary; inverted perovskite ... See more keywords

Performance enhancement of 2D tin-halide perovskite transistors via molecule-assisted grain boundary passivation and hole doping

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Published in 2024 at "Journal of Physics D: Applied Physics"

DOI: 10.1088/1361-6463/ad3b0a

Abstract: Tin (Sn2+)-based halide perovskites have garnered considerable interest for potential applications in field-effect transistors, owing to their low-cost solution processing capability and favorable hole transport properties. However, the polycrystalline nature of halide perovskite films necessitates… read more here.

Keywords: boundary passivation; halide; grain boundary; hole doping ... See more keywords