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Published in 2019 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2019.2900736
Abstract: Transient cell current caused by the trapping/detrapping of grain boundary traps in the polycrystalline silicon (poly-Si) channel of a 3-D NAND cell string is comprehensively studied in this paper. This transient has a time constant…
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Keywords:
grain boundary;
boundary trap;
transient;
nand ... See more keywords