Early effect of box, triangular and trapezoidal Ge profiles for SiGe HBTs
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DOI: 10.1016/j.spmi.2017.07.024
Abstract: Abstract This paper deals with the Early effect of SiGe HBTs. Simple, analytical expressions are derived for forward and reverse Early voltages, considering different Ge profiles in the base, including box, triangular, and trapezoidal profiles.… read more here.
Keywords: early effect; box triangular; triangular trapezoidal; sige hbts ... See more keywords