Dielectric breakdown along c-axis boundaries in magnetoelectric O2O3 for spintronic devices
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DOI: 10.1017/s1431927617007875
Abstract: Voltage controlled boundary magnetism is crucial for spintronic devices with reduced power consumption. Magnetoelectric and antiferromagnetic Cr2O3 is an ideal material due to its electric field switching of nonvolatile boundary magnetism [1]. The boundary magnetization… read more here.
Keywords: cr2o3; breakdown along; spintronic devices; breakdown field ... See more keywords