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Published in 2017 at "Semiconductors"
DOI: 10.1134/s1063782617030095
Abstract: Abstractp+–n0–n+ 4H-SiC diodes with homogeneous avalanche breakdown at 1860 V are fabricated. The pulse current–voltage characteristics are measured in the avalanche-breakdown mode up to a current density of 4000 A/cm2. It is shown that the…
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Keywords:
voltage;
avalanche breakdown;
current voltage;
sic diodes ... See more keywords