Novel vertical power MOSFET with partial GaN/Si heterojunction to improve breakdown voltage by breakdown point transfer terminal technology
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DOI: 10.1088/1361-6641/ab9eca
Abstract: In this paper, The Vertical Power MOSFET with Partial GaN/Si Heterojunction is proposed, and the Partial GaN/Si Heterojunction double-diffused MOSFET（Partial GaN/Si VDMOS）and U-shaped MOSFET（Partial GaN/Si UMOS）are simulated. Thanks to the breakdown point transfer technology（BPT）, the… read more here.
Keywords: partial gan; gan heterojunction; breakdown point; mosfet partial ... See more keywords