A 3-D Theoretical Model of Thermal Breakdown in Semiconductor Devices Under Multiple Pulses
Sign Up to like & getrecommendations! Published in 2019 at "IEEE Transactions on Plasma Science"
DOI: 10.1109/tps.2019.2946457
Abstract: The preexisting theoretical modeling of thermal breakdown in semiconductor devices under a single pulse is summarized, through which the relationship between failure power and pulsewidth, as well as the frequency can be obtained. In order… read more here.
Keywords: thermal breakdown; semiconductor; multiple pulses; breakdown semiconductor ... See more keywords