Effect of Annealing Treatment on Performance of Ga2O3 Conductive-Bridging Random-Access Memory
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DOI: 10.1007/s11664-020-08177-9
Abstract: The effect of annealing on the performance of conductive-bridging random-access memory (CBRAM) with an amorphous gallium oxide (a-Ga2O3) switching layer has been studied. After annealing at 200°C in N2, a significant improvement of the bipolar… read more here.
Keywords: conductive bridging; random access; bridging random; performance ... See more keywords