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Published in 2017 at "Crystal Research and Technology"
DOI: 10.1002/crat.201700052
Abstract: In this wok, a novel multi-crucible Bridgman method is developed to produce the O 2 inch Si-doped GaAs crystals. Five placements are designed in the furnace means five ingots could be produced at the same…
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Keywords:
gaas crystals;
crucible bridgman;
bridgman method;
doped gaas ... See more keywords
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Published in 2020 at "Journal of Materials Science: Materials in Electronics"
DOI: 10.1007/s10854-020-03566-6
Abstract: CdMgTe crystal is a hopeful room temperature radiation detection material because of some potential advantages. The Cd 0.95 Mg 0.05 Te ingot with free of inclusion was successfully grown by a modified Bridgman method in…
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Keywords:
cdmgte;
inclusion;
growth characterization;
bridgman method ... See more keywords
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Published in 2019 at "Optoelectronics Letters"
DOI: 10.1007/s11801-019-8100-y
Abstract: High-quality KMgF3 single crystal containing 0.5 mol% europium (Eu) was prepared by an improved Bridgman method. X-ray diffraction (XRD), photoluminescence spectra and fluorescence lifetime were measured. The results indicate the reduction of Eu3+ to Eu2+…
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Keywords:
kmgf3 single;
single crystal;
doped kmgf3;
ion ... See more keywords
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Published in 2020 at "Rare Metals"
DOI: 10.1007/s12598-020-01601-3
Abstract: In this work, an II–VI group semiconductor zinc telluride (ZnTe) single crystal is prepared by a novel vertical Bridgman method using Te as flux. The initial mole ratio of Zn/Te = 3:7 is designed for raw material…
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Keywords:
vertical bridgman;
bridgman method;
znte;
znte single ... See more keywords
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Published in 2017 at "Journal of Crystal Growth"
DOI: 10.1016/j.jcrysgro.2016.11.112
Abstract: CdIn2S2Se2 polycrystalline material has been synthesized by melt oscillation method. Vertical Bridgman method was used to grow a good quality CdIn2S2Se2 single crystal. The crystalline phase and growth orientation were confirmed by powder X-ray diffraction…
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Keywords:
growth;
single crystal;
method;
bridgman method ... See more keywords
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Published in 2017 at "Journal of Materials Processing Technology"
DOI: 10.1016/j.jmatprotec.2017.02.024
Abstract: Abstract The pore straightness of Gasar ingots was investigated through experiments and numerical simulation. The pore growth direction changes from diverging to convergent as the withdrawing speed increases, and straight pores are obtained when the…
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Keywords:
influence withdrawing;
bridgman method;
withdrawing speed;
gasar ingots ... See more keywords
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Published in 2018 at "Materials Letters"
DOI: 10.1016/j.matlet.2018.01.174
Abstract: Abstract Bridgman method with stationary crucible was used to grow NiMnCuGa single crystal. Microstructure observations, as well as XRD pattern, revealed a presence of martensitic structure at room temperature. Crystal structure was determined as a…
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Keywords:
stationary crucible;
method stationary;
single crystal;
bridgman method ... See more keywords
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Published in 2017 at "Optics and Laser Technology"
DOI: 10.1016/j.optlastec.2017.05.005
Abstract: Abstract This paper reported on successful preparation of Na 5 Lu 9 F 32 single crystals co-doped with ∼2 mol% Er 3+ and various Tm 3+ concentrations from 0.7 mol% to 3.2 mol% by Bridgman method. The J-O…
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Keywords:
energy transfer;
energy;
single crystals;
crystals doped ... See more keywords