Extracting Voltage Dependence of BTI-induced Degradation Without Temporal Factors by Using BTI-Sensitive and BTI-Insensitive Ring Oscillators
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DOI: 10.1109/tsm.2020.2983060
Abstract: Measuring bias temperature instability (BTI) by ring oscillators (ROs) is frequently used. However, the performance of a semiconductor chip is fluctuated dynamically due to bias, temperature and etc. BTI-sensitive and -insensitive ROs are implemented in… read more here.
Keywords: induced degradation; bti sensitive; bti induced; degradation without ... See more keywords