An improved composite JTE technique with increased tolerance to interface charges for 2.8 kV β -Ga2O3 Schottky rectifier
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DOI: 10.1063/5.0295356
Abstract: This paper presents an efficient high-k BaTiO3 dielectric assisted junction termination extension (BTO-JTE) technique for vertical β-Ga2O3 Schottky barrier diodes (SBDs), to reduce the sensitivity of breakdown voltage (BV) to interface charges. In comparison with… read more here.
Keywords: interface; interface charges; ga2o3 schottky; bto jte ... See more keywords