Buffer breakdown in GaN-on-Si HEMTs: A comprehensive study based on a sequential growth experiment
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DOI: 10.1016/j.microrel.2019.113461
Abstract: Abstract The aim of this work is to investigate the breakdown mechanisms of the layers constituting the vertical buffer of GaN-on-Si HEMTs; in addition, for the first time we demonstrate that the breakdown field of… read more here.
Keywords: layer; gan hemts; buffer breakdown; growth ... See more keywords