Improvement Design for Turn-On Switching Characteristics in Surface Buffer Insulated Gate Bipolar Transistor
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DOI: 10.1109/led.2020.3034898
Abstract: A design direction in surface buffer insulated gate bipolar transistor (SB-IGBT) is shown for improvement of turn-on switching characteristics, such as switching controllability, current surge and turn-on loss. At turn-on switching, hole current around the… read more here.
Keywords: switching characteristics; buffer insulated; gate; surface buffer ... See more keywords