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Published in 2022 at "Micromachines"
DOI: 10.3390/mi13091519
Abstract: We report on the fabrication and electrical characterization of AlGaN/GaN normally off transistors on silicon designed for high-voltage operation. The normally off configuration was achieved with a p-gallium nitride (p-GaN) cap layer below the gate,…
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Keywords:
trapping effects;
voltage;
breakdown voltage;
low buffer ... See more keywords