Experimental Investigation of Charge Sharing Induced SET Depending on Transistors in Abutted Rows in 65 nm Bulk CMOS Technology
Sign Up to like & getrecommendations! Published in 2022 at "IEEE Access"
DOI: 10.1109/access.2022.3177408
Abstract: The effect of transistors in abutted rows on charge sharing is investigated by changing the configuration of the transistors in abutted rows in this work. 3D TCAD numerical simulations indicate that the existence of transistors… read more here.
Keywords: charge sharing; sharing induced; transistors abutted; abutted rows ... See more keywords
A Gm-Boosting Technique for Millimeter-Wave Low-Noise Amplifiers in 28-nm Triple-Well Bulk CMOS Using Floating Resistor in Body Biasing
Sign Up to like & getrecommendations! Published in 2022 at "IEEE Transactions on Circuits and Systems I: Regular Papers"
DOI: 10.1109/tcsi.2022.3200161
Abstract: This paper presents a simple yet effective $G_{m}$ -boosting technique for improving gain and noise performance of millimeter-wave (mm-wave) low-noise amplifiers (LNAs) comprising triple-well transistors typically found in the modern bulk CMOS processes. The proposed… read more here.
Keywords: noise; resistor; triple well; boosting technique ... See more keywords
Analysis and Design of a Non-Magnetic Bulk CMOS Passive Circulator Using 25% Duty-Cycle Clock
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DOI: 10.3390/mi14010033
Abstract: A circulator, which is a non-reciprocal device, is widely used in full-duplex systems, future communication and sensing networks, and quantum computing, and it is difficult to implement a passive topology on a chip. Based on… read more here.
Keywords: circulator; design; non magnetic; bulk cmos ... See more keywords