A Bias-Dependent Single-Event-Enabled Compact Model for Bulk FinFET Technologies
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DOI: 10.1109/tns.2019.2897329
Abstract: A single-event-enabled compact model for bulk FinFET technologies has been developed and integrated with a process design kit (PDK) and an industry standard electronic design automation tool flow. The compact model incorporates transistor bias dependence… read more here.
Keywords: compact model; model; single event; bulk finfet ... See more keywords
Evidence of Interface Trap Build-Up in Irradiated 14-nm Bulk FinFET Technologies
Sign Up to like & getrecommendations! Published in 2021 at "IEEE Transactions on Nuclear Science"
DOI: 10.1109/tns.2021.3065267
Abstract: Total ionizing dose response of 14-nm bulk-Si FinFETs has been studied with a specially designed test chip. The radiation testing shows evidence of interface trap build-up on 14-nm Bulk FinFET technologies. These defects created in… read more here.
Keywords: bulk finfet; evidence interface; finfet technologies; interface trap ... See more keywords