Influence of N‐vacancy on the electronic and optical properties of bulk GaN from first‐principles investigations
Sign Up to like & getrecommendations! Published in 2021 at "International Journal of Energy Research"
DOI: 10.1002/er.6744
Abstract: Gallium nitride (GaN) is a promising semiconductor material for the application of the high power electronic, optoelectronic, laser diodes, etc. The previous works have been focused on the electronic and optical properties of the monolayer… read more here.
Keywords: electronic optical; bulk gan; vacancy electronic; properties bulk ... See more keywords
A comparative study of InN growth on quartz, silicon, C-sapphire and bulk GaN substrates by RF magnetron sputtering
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Materials Science: Materials in Electronics"
DOI: 10.1007/s10854-017-6657-4
Abstract: In this work, we investigate the growth of indium nitride (InN) films on quartz, bulk GaN, sapphire (001) and Si (111) substrates. An InN buffer layer was first deposited on all the substrates, then an… read more here.
Keywords: inn buffered; sapphire; comparative study; growth ... See more keywords
Growth and characterization of thin Al-rich AlGaN on bulk GaN as an emitter-base barrier for hot electron transistor
Sign Up to like & getrecommendations! Published in 2019 at "Materials Science in Semiconductor Processing"
DOI: 10.1016/j.mssp.2018.12.036
Abstract: Abstract In this work, we report on the metal-organic-chemical-vapour-deposition (MOCVD) and characterization of Al-rich thin layers of AlGaN on conductive GaN, to be used as emitter-base barriers for graphene hot electron transistors. After preliminary experiments,… read more here.
Keywords: gan; electron; barrier; bulk gan ... See more keywords
High-Performance GaN Vertical Fin Power Transistors on Bulk GaN Substrates
Sign Up to like & getrecommendations! Published in 2017 at "IEEE Electron Device Letters"
DOI: 10.1109/led.2017.2670925
Abstract: This letter reports a GaN vertical fin power field-effect-transistor structure with submicron fin-shaped channels on bulk GaN substrates. In this vertical transistor design only n-GaN layers are needed, while no material regrowth or p-GaN layer… read more here.
Keywords: gan substrates; gan vertical; vertical fin; bulk gan ... See more keywords
Elasticity and Inelasticity of Bulk GaN Crystals
Sign Up to like & getrecommendations! Published in 2020 at "Technical Physics"
DOI: 10.1134/s1063784220010089
Abstract: Abstract The elastic and microplastic properties of large quasi-bulk GaN samples of two types, grown by hydride vapor-phase epitaxy, have been acoustically investigated. Samples of the first type are polycrystals textured along a crystallographic direction,… read more here.
Keywords: bulk; inelasticity bulk; elasticity inelasticity; gan crystals ... See more keywords