TCAD Simulation of Single Event Transient in Si Bulk MOSFET at Cryogenic Temperature
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DOI: 10.1109/access.2022.3206401
Abstract: In this paper, the functional relationship between temperature and single event transient currents caused by heavy-ion striking using TCAD simulation is investigated from 77K to 300 K on 65nm Si bulk n MOSFET. TCAD simulation… read more here.
Keywords: event transient; bulk mosfet; tcad simulation; temperature ... See more keywords