Ultra-wide bandgap, conductive, high mobility, and high quality melt-grown bulk ZnGa2O4 single crystals
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DOI: 10.1063/1.5053867
Abstract: Truly bulk ZnGa2O4 single crystals were obtained directly from the melt. High melting point of 1900 ± 20 °C and highly incongruent evaporation of the Zn- and Ga-containing species impose restrictions on growth conditions. The… read more here.
Keywords: znga2o4 single; mobility; melt grown; bulk znga2o4 ... See more keywords